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AD8011AR-REEL Scheda tecnica(PDF) 4 Page - Analog Devices |
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AD8011AR-REEL Scheda tecnica(HTML) 4 Page - Analog Devices |
4 / 16 page REV. C –4– AD8011 CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation 2 Plastic DIP Package (N) . . . . . . . Observe Derating Curves Small Outline Package (R) . . . . . . Observe Derating Curves Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . . .Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . –65 °C to +125°C Operating Temperature Range (A Grade) . . . –40 °C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300 °C NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead PDIP Package: JA = 90 °C/W 8-Lead SOIC Package: JA = 155 °C/W 2.0 1.5 0.5 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE ( C) 1.0 0 TJ = 150 C 8-LEAD PLASTIC DIP PACKAGE 8-LEAD SOIC PACKAGE Figure 3. Maximum Power Dissipation vs. Temperature MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by the AD8011 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150 °C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175 °C for an extended period can result in device failure. While the AD8011 is internally short-circuit protected, this may not be sufficient to guarantee that the maximum junction tem- perature is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves (shown in Figure 3). 0.01 F 0.01 F 10 F 10 F RL 1k 1k 1k 50 VIN VOUT +VS –VS Figure 4. Test Circuit; Gain = +2 0.01 F 0.01 F 10 F 10 F RL 1k 1k 1k VIN VOUT +VS –VS 52.3 Figure 5. Test Circuit; Gain = –1 ORDERING GUIDE Temperature Package Package Model Range Description Option AD8011AN –40 °C to +85°C8-Lead PDIP N-8 AD8011AR –40 °C to +85°C 8-Lead SOIC R-8 AD8011AR-REEL –40 °C to +85°C 13" Tape and Reel R-8 AD8011AR-REEL7 –40 °C to +85°C 7" Tape and Reel R-8 |
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