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BYC10X-600 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BYC10X-600 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 10 page BYC10X-600_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 16 January 2008 2 of 10 NXP Semiconductors BYC10X-600 Rectifier diode, hyperfast 3. Ordering information 4. Limiting values Table 2. Ordering information Type number Package Name Description Version BYC10X-600 TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 2-lead TO-220 ‘full pack’ SOD113 Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage square waveform; δ = 1.0; Th ≤ 100 °C - 500 V IF(AV) average forward current square waveform; δ = 0.5; Th ≤ 37 °C - 10 A IFRM repetitive peak forward current square waveform; δ = 0.5; Th ≤ 37 °C - 20 A IFSM non-repetitive peak forward current t = 10 ms; sinusoidal waveform - 91 A t = 8.3 ms; sinusoidal waveform - 100 A Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C |
Codice articolo simile - BYC10X-600 |
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Descrizione simile - BYC10X-600 |
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