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TLP795G Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP795G Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 616 TOSHIBA CORPORATION TLP795G Maximum Ratings (Ta = 25 °C) Note 1:Device considered a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 8 shorted together. Recommended Operating Conditions Circuit Connections CHARACTERISTIC SYMBOL RATING UNIT LED Forward Current IF 30 mA Forward Current Derating (Ta ≥ 25°C) ∆I F/°C -0.3 mA/ °C Peak Forward Current (100 µs pulse, 100pps) IFP 1 A Reverse Voltage VR 5 V Junction Temperature Tj 125 °C DETECTOR Off-State Output Terminal Voltage VOFF 400 V On-State RMS Current A Connection ION 150 mA B Connection 200 C Connection 300 On-State Current Derating (Ta ≥ 25°C) A Connection ∆I ON/°C -1.5 mA/ °C B Connection -2.0 C Connection -3.0 Junction Temperature tj 125 °C Storage Temperature Range Tstg -55~100 °C Operating Temperature Range Topr -20~85 °C Lead Soldering Temperature (10s) Tsol 260 °C Isolation Voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) BVS 5000 Vrms CHARACTERISTIC SYMBOL MIN. TYP. MX. UNIT Supply Voltage VDD – – 320 V Forward Current IF 10 15 20 mA On-State Current ION – – 150 mA Operating Temperature Topr -20 – 80 °C |
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