BU407 datasheet(2/4 Pages) STMICROELECTRONICS

Il numero della parte	BU407

Spiegazioni elettronici	HIGH CURRENT NPN SILICON TRANSISTOR

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.08

oC/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

70

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE =330 V

VCE =200 V

Tcase = 100

oC

5

100

1

mA

µA

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 6 V

1

mA

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

1

V

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 5 A

1.2

V

fT

Transition-Frequency

IC = 1 A

VCE = 5 V

f = 1 MHz

10

16

MHz

toff

∗∗

Turn-off Time

IC = 5 A

IBend = 0.5 A

0.75

µs

Is/b

Second Breakdown

Collector Current

VCE = 40 V

t = 10 ms

4

A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

BU407

2/4

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