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BF257 Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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BF257 Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 5 page ELECTRICAL CHARACTERISTICS (Tamb =25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CB O Collector Cutoff Current (I E =0) for BF257 for BF258 for BF259 VCB = 100 V VCB = 200 V VCB = 250 V 50 50 50 nA nA nA V(BR) CB O Collector-base Breakdown Voltage (I E =0) I C =100 µA for BF257 for BF258 for BF259 160 250 300 V V V V(BR)CEO * Collector-emitter Breakdown Voltage (I B =0) I C =10 mA for BF257 for BF258 for BF259 160 250 300 V V V V(BR) EB O Emittter-base Breakdown Voltage (I C =0) I E =100 µA5 V VCE (s at)* Collector-emitter Saturation Voltage I C =30 mA I B =6 mA 1 V h FE* DC Current Gain IC =30 mA VCE =10 V 25 f T Transition Frequency I C =15 mA VCE =10 V 90 MHz Cre Reverse Capacitance IC =0 f= 1 MHz VCE =30 V 3pF * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. DC Current Gain. THERMAL DATA Rth j-cas e R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 30 175 °C/W °C/W BF257-BF258-BF259 2/5 |
Codice articolo simile - BF257 |
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Descrizione simile - BF257 |
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