BDW94C datasheet(2/6 Pages) STMICROELECTRONICS

Il numero della parte	BDW94C

Spiegazioni elettronici	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

1.56

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-of f

Current (IE =0)

for BDW94B

VCB =80 V

for BDW93C/94C

VCB = 100 V

Tcase = 150

oC

for BDW94B

VCB =80 V

for BDW93C/94C

VCB = 100 V

100

5

µA

mA

ICEO

Collector Cut-of f

Current (IB =0)

for BDW94B

VCE =80 V

for BDW93C/94C

VCE = 100 V

1

mA

IEBO

Emitter Cut-of f Current

(IC =0)

VEB =5 V

2

mA

VCEO(s us)

∗ Collector-Emitter

Sustaining Volt age

(IB =0)

IC = 100 mA

for BDW94B

for BDW 93C/94C

80

100

V

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =5 A

I B =20 mA

IC =10 A

I B = 100 mA

2

3

V

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC =5 A

I B =20 mA

IC =10 A

I B = 100 mA

2. 5

4

V

hFE

∗

DC Current G ain

IC =3 A

VCE =3 V

IC =5 A

VCE =3 V

IC =10 A

VCE =3 V

1000

750

100

20K

VF*

Parallel-diode Forward

Voltage

IF =5 A

IF =10 A

1.3

1.8

2

4

V

hfe

SmallSignalCurrent

Gain

IC =1 A

VCE =10 V

f= 1 MHz

20

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

BDW93C/BDW94B/BDW94C

2/6

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