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IRF7842PBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF7842PBF Scheda tecnica(HTML) 1 Page - International Rectifier |
1 / 9 page 09/21/04 www.irf.com 1 IRF7842PbF HEXFET® Power MOSFET Notes through
are on page 9 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 PD - 95269 Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free VDSS RDS(on) max Qg (typ.) 40V 5.0m :@V GS = 10V 33nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f W PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 °C/W RθJA Junction-to-Ambient fg ––– 50 -55 to + 150 2.5 0.02 1.6 Max. 18 14 140 ± 20 40 |
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