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TSC128DCZ Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC128DCZ Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSC128D High Voltage Fast-Switching NPN Power Transistor 1/5 Version: A07 TO-220 PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 2.5A / 0.5A Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor ● Integrated Antiparallel Collector-Emitter Diode Ordering Information Part No. Package Packing TSC128DCZ C0 TO-220 50pcs / Tube Block Diagram Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Peak Current (tp <5ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5ms) IBM 4 A Total Dissipation Ptot 70 W Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -65 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 1.78 oC/W Junction to Ambient Thermal Resistance RӨJA 62.5 oC/W Pin Definition: 1. Base 2. Collector 3. Emitter |
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