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IRL3202PBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRL3202PBF Scheda tecnica(HTML) 2 Page - International Rectifier |
2 / 8 page IRL3202PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.029 V/°C Reference to 25°C, ID = 1mA 0.019VGS = 4.5V, ID = 29A 0.016 Ω VGS = 7.0V, ID = 29A VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA gfs Forward Transconductance 28 S VDS = 16V, ID = 29A 25 µA VDS = 20V, VGS = 0V 250 VDS = 10V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = 10V Gate-to-Source Reverse Leakage -100 VGS = -10V Qg Total Gate Charge 43 ID = 29A Qgs Gate-to-Source Charge 12 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge 13 VGS = 4.5V, See Fig. 6 td(on) Turn-On Delay Time 9.8 VDD = 10V tr Rise Time 100 ns ID = 29A td(off) Turn-Off Delay Time 63 RG = 9.5Ω, VGS = 4.5V tf Fall Time 82 RD = 0.3Ω, Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance 2000 VGS = 0V Coss Output Capacitance 800 pF VDS = 15V Crss Reverse Transfer Capacitance 290 = 1.0MHz, See Fig. 5 S D G Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ= 25°C, L = 0.64mH RG = 25Ω, IAS = 29A. Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 29A, VGS = 0V trr Reverse Recovery Time 68 100 ns TJ = 25°C, IF = 29A Qrr Reverse Recovery Charge 130 190 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 48 190 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance 7.5 LD Internal Drain Inductance 4.5 IDSS Drain-to-Source Leakage Current |
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