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NP80N03ELE Scheda tecnica(PDF) 1 Page - NEC |
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NP80N03ELE Scheda tecnica(HTML) 1 Page - NEC |
1 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SWITCHING N-CHANNEL POWER MOS FET DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03ELE, NP80N03KLE NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE Document No. D14032EJ5V0DS00 (5th edition) Date Published October 2007 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" 1999, 2000, 2007 DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE NP80N03ELE-E1-AY Note1, 2 NP80N03ELE-E2-AY Note1, 2 TO-263 (MP-25ZJ) typ. 1.4 g NP80N03KLE-E1-AY Note1 NP80N03KLE-E2-AY Note1 Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N03CLE-S12-AZ Note1, 2 Sn-Ag-Cu TO-220 (MP-25) typ. 1.9 g NP80N03DLE-S12-AY Note1, 2 TO-262 (MP-25 Fin Cut) typ. 1.8 g NP80N03MLE-S18-AY Note1 TO-220 (MP-25K) typ. 1.9 g NP80N03NLE-S18-AY Note1 Pure Sn (Tin) Tube 50 p/tube TO-262 (MP-25SK) typ. 1.8 g Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 m Ω MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 m Ω MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 m Ω MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF TYP. • Built-in gate protection diode (TO-220) (TO-262) (TO-263) <R> |
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