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TLPGE11TPF Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TLPGE11TPF Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page TL(RE,OE,YE,GE,PGE)11TP(F) 2007-10-01 4 TLOE11TP(F) IF – VF IV – IF 580 540 660 0.8 0 0.6 1.0 0.2 0.4 560 600 620 640 IF = 20 mA Ta = 25°C 2.0 1.6 2.3 50 30 10 3 1 1.7 2.1 5 100 1.8 1.9 2.2 Ta = 25°C 10 1 100 1 1000 3 5 30 50 10 Ta = 25°C 100 3 5 30 50 300 500 Forward voltage VF (V) Forward current IF (mA) IV – Tc 20 −20 80 0.1 3 1 0.3 0.5 0 40 60 Case temperature Tc (°C) Ta = 25 °C 10° 90° 0 90° 0.2 0.4 0.6 0.8 80° 70° 60° 50° 40° 30° 20° 10° 0° 70° 80° 50° 60° 30° 40° 20° Radiation pattern IF – Ta 40 0 120 60 0 40 80 20 20 60 80 100 Ambient temperature Ta (°C) Wavelength λ (nm) Relative luminous intensity – Wavelength |
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