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TLPGE53T Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TLPGE53T
Spiegazioni elettronici  Panel Circuit Indicators
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLPGE53T Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)53T(F)
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Product Name
Forward Current
IF (mA)
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
Topr (°C)
Storage
Temperature
Tstg (°C)
TLRE53T(F)
50
4
120
TLRME53T(F)
50
4
120
TLSE53T(F)
50
4
120
TLOE53T(F)
50
4
120
TLYE53T(F)
50
4
120
TLPYE53T(F)
50
4
120
TLGE53T(F)
50
4
120
TLFGE53T(F)
50
4
120
TLPGE53T(F)
50
4
120
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical and Optical Characteristics (Ta = 25°C)
Typ. Emission Wavelength
Luminous Intensity
IV
Forward Voltage
VF
Reverse Current
IR
Product Name
λd
λP
Δλ
IF
Min
Typ.
IF
Typ.
Max
IF
Max
VR
TLRE53T (F)
630
(644)
20
20
153
400
20
1.9
2.4
20
50
4
TLRME53T (F)
626
(636)
23
20
272
600
20
1.9
2.4
20
50
4
TLSE53T (F)
613
(623)
20
20
272
800
20
1.9
2.4
20
50
4
TLOE53T (F)
605
(612)
20
20
272
1000
20
2.0
2.4
20
50
4
TLYE53T (F)
587
(590)
17
20
272
800
20
2.0
2.4
20
50
4
TLPYE53T (F)
580
(583)
14
20
153
450
20
2.0
2.4
20
50
4
TLGE53T (F)
571
(574)
17
20
153
400
20
2.0
2.4
20
50
4
TLFGE53T (F)
565
(568)
15
20
85
200
20
2.0
2.4
20
50
4
TLPGE53T (F)
558
(562)
14
20
47.6
130
20
2.1
2.4
20
50
4
Unit
nm
mA
mcd
mA
V
mA
μA
V
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.


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