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TLPYE19TP Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLPYE19TP Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F) 2007-10-01 2 Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP Δλ IF Min Typ. IF Typ. Max IF Max VR TLPGE19TP(F) 558 (562) 14 20 153 500 20 2.1 2.4 20 50 4 TLFGE19TP(F) 565 (568) 15 20 272 800 20 2.0 2.4 20 50 4 TLGE19TP(F) 571 (574) 17 20 476 1300 20 2.0 2.4 20 50 4 TLPYE19TP(F) 580 (583) 14 20 476 2000 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA μA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
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