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TC75W58FK Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TC75W58FK Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TC75W58FU/FK 2007-11-01 3 Electrical Characteristics (VDD = 5V, VSS = GND, Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ― ― ― ±1 ±7 mV Input offset current IIO ― ― ― 1 ― pA Input bias current II ― ― ― 1 ― pA Common mode input voltage CMVIN ― ― 0 ― 4.1 V Supply current IDD (Note) ― ― ― 22 44 μA Voltage gain GV ― ― ― 94 ― dB Sink current Isink ― VOL = 0.5V 13 25 ― mA Output leak current ILEAK ― VO = 5V ― 5 ― nA Output voltage VOL ― Isink = 5.0mA ― 0.1 0.3 V Operating supply voltage VDD ― ― 1.8 ― 7.0 V tPLH (1) ― Over drive = 100mV ― 800 ― Propagation delay time (turn on) tPLH (2) ― TTL step input ― 620 ― ns tPHL (1) ― Over drive = 100mV ― 230 ― Propagation delay time (turn off) tPHL (2) ― TTL step input ― 350 ― ns tTLH ― Over drive = 100mV ― 190 ― Response time tTHL ― Over drive = 100mV ― 6 ― ns Electrical Characteristics (VDD = 3V, VSS = GND, Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO ― ― ― ±1 ±7 mV Input offset current IIO ― ― ― 1 ― pA Input bias current II ― ― ― 1 ― pA Common mode input voltage CMVIN ― ― 0 ― 2.1 V Supply current IDD (Note) ― ― ― 20 40 μA Sink current Isink ― VOL = 0.5V 6 18 ― mA Output leak current ILEAK ― VO = 3V ― 5 ― nA Output voltage VOL ― Isink = 5.0mA ― 0.15 0.35 V Propagation delay time (turn on) tPLH ― Over drive = 100mV ― 590 ― ns Propagation delay time (turn off) tPHL ― Over drive = 100mV ― 230 ― ns tTLH ― Over drive = 100mV ― 170 ― Response time tTHL ― Over drive = 100mV ― 5 ― ns Note: Since this product causes an increase in current consumption with a rise in operational frequency, make sure that power consumption does not exceed the allowable dissipation. |
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