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TC75W58FK Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TC75W58FK
Spiegazioni elettronici  Dual Comparator
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC75W58FK Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TC75W58FU/FK
2007-11-01
3
Electrical Characteristics (VDD = 5V, VSS = GND, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
±1
±7
mV
Input offset current
IIO
1
pA
Input bias current
II
1
pA
Common mode input voltage
CMVIN
0
4.1
V
Supply current
IDD (Note)
22
44
μA
Voltage gain
GV
94
dB
Sink current
Isink
VOL = 0.5V
13
25
mA
Output leak current
ILEAK
VO = 5V
5
nA
Output voltage
VOL
Isink = 5.0mA
0.1
0.3
V
Operating supply voltage
VDD
1.8
7.0
V
tPLH (1)
Over drive = 100mV
800
Propagation delay time (turn on)
tPLH (2)
TTL step input
620
ns
tPHL (1)
Over drive = 100mV
230
Propagation delay time (turn off)
tPHL (2)
TTL step input
350
ns
tTLH
Over drive = 100mV
190
Response time
tTHL
Over drive = 100mV
6
ns
Electrical Characteristics (VDD = 3V, VSS = GND, Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input offset voltage
VIO
±1
±7
mV
Input offset current
IIO
1
pA
Input bias current
II
1
pA
Common mode input voltage
CMVIN
0
2.1
V
Supply current
IDD (Note)
20
40
μA
Sink current
Isink
VOL = 0.5V
6
18
mA
Output leak current
ILEAK
VO = 3V
5
nA
Output voltage
VOL
Isink = 5.0mA
0.15
0.35
V
Propagation delay time (turn on)
tPLH
Over drive = 100mV
590
ns
Propagation delay time (turn off)
tPHL
Over drive = 100mV
230
ns
tTLH
Over drive = 100mV
170
Response time
tTHL
Over drive = 100mV
5
ns
Note:
Since this product causes an increase in current consumption with a rise in operational frequency, make sure
that power consumption does not exceed the allowable dissipation.


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