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TC74VHCT32AF Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC74VHCT32AF Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page TC74VHCT32AF/AFN/AFT 2007-10-01 4 AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ― 3.8 5.5 1.0 6.5 Propagation delay time tpLH tpHL ― 5.0 ± 0.5 50 ― 5.3 7.5 1.0 8.5 ns Input capacitance CIN ― ― 4 10 ― 10 pF Power dissipation capacitance CPD (Note) ― 14 ― ― ― pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate) Noise Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Characteristics Symbol VCC (V) Typ. Limit Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.4 0.8 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 −0.4 −0.8 V Minimum high level dynamic input voltage VIHD CL = 50 pF 5.0 ― 2.0 V Maximum low level dynamic input voltage VILD CL = 50 pF 5.0 ― 0.8 V |
Codice articolo simile - TC74VHCT32AF_07 |
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Descrizione simile - TC74VHCT32AF_07 |
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