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TC74VHC86F Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC74VHC86F Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 8 page TC74VHC86F/FN/FT 2007-10-01 4 AC Characteristics (input: tr = tf = 3 ns) Test Condition Ta = 25°C Ta = −40 to 85°C Characteristics Symbol VCC (V) CL (pF) Min Typ. Max Min Max Unit 15 ⎯ 7.0 11.0 1.0 13.0 3.3 ± 0.3 50 ⎯ 9.5 14.5 1.0 16.5 15 ⎯ 4.8 6.8 1.0 8.0 Propagation delay time tpLH tpHL ⎯ 5.0 ± 0.5 50 ⎯ 6.3 8.8 1.0 10.0 ns Input capacitance CIN ⎯ ⎯ 4 10 ⎯ 10 pF Power dissipation capacitance CPD (Note) ⎯ 18 ⎯ ⎯ ⎯ pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate) Noise Characteristics (input: tr = tf = 3 ns) Ta = 25°C Characteristics Symbol Test Condition VCC (V) Typ. Limit Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.3 0.8 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 −0.3 −0.8 V Minimum high level dynamic input voltage VIHD CL = 50 pF 5.0 ⎯ 3.5 V Maximum low level dynamic input voltage VILD CL = 50 pF 5.0 ⎯ 1.5 V Input Equivalent Circuit INPUT |
Codice articolo simile - TC74VHC86F_07 |
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Descrizione simile - TC74VHC86F_07 |
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