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TC7MH238FK Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC7MH238FK Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
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4 / 7 page  TC7MH238FK 2007-10-19 4 Electrical Characteristics DC Characteristics Ta = 25°C Ta = −40~85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 2.0 1.50 ⎯ ⎯ 1.50 ⎯ High level VIH ⎯ 3.0~5.5 VCC × 0.7 ⎯ ⎯ VCC × 0.7 ⎯ 2.0 ⎯ ⎯ 0.50 ⎯ 0.50 Input voltage Low level VIL ⎯ 3.0~5.5 ⎯ ⎯ VCC × 0.3 ⎯ VCC × 0.3 V 2.0 1.9 2.0 ⎯ 1.9 ⎯ 3.0 2.9 3.0 ⎯ 2.9 ⎯ IOH = −50 μA 4.5 4.4 4.5 ⎯ 4.4 ⎯ IOH = −4 mA 3.0 2.58 ⎯ ⎯ 2.48 ⎯ High level VOH VIN = VIH or VIL IOH = −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯ 2.0 ⎯ 0 0.1 ⎯ 0.1 3.0 ⎯ 0 0.1 ⎯ 0.1 IOL = 50 μA 4.5 ⎯ 0 0.1 ⎯ 0.1 IOL = 4 mA 3.0 ⎯ ⎯ 0.36 ⎯ 0.44 Output voltage Low level VOL VIN = VIH or VIL IOL = 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44 V Input leakage current IIN VIN = 5.5 V or GND 0~5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA |
Codice articolo simile - TC7MH238FK_07 |
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Descrizione simile - TC7MH238FK_07 |
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