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IRL3716LPBF Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRL3716LPBF Scheda tecnica(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRL3716/3716S/3716LPbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.93 1.3 V TJ = 25°C, IS = 72A, VGS = 0V ––– 0.80 ––– TJ = 125°C, IS = 72A, VGS = 0V trr Reverse Recovery Time ––– 180 280 ns TJ = 25°C, IF = 72A, VR=20V Qrr Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 190 280 ns TJ = 125°C, IF = 72A, VR=20V Qrr Reverse Recovery Charge ––– 85 130 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA ––– 3.0 4.0 VGS = 10V, ID = 90A ––– 4.0 4.8 VGS = 4.5V, ID = 72A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 250 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 640 mJ IAR Avalanche Current ––– 72 A Avalanche Characteristics S D G Diode Characteristics 180 720 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 100 ––– ––– S VDS = 10V, ID = 72A Qg Total Gate Charge ––– 53 79 ID = 72A Qgs Gate-to-Source Charge ––– 17 26 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 24 35 VGS = 4.5V Qoss Output Gate Charge ––– 50 75 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 18 ––– VDD = 10V tr Rise Time ––– 140 ––– ID = 72A td(off) Turn-Off Delay Time ––– 38 ––– RG = 3.9Ω tf Fall Time ––– 36 ––– VGS = 4.5V Ciss Input Capacitance ––– 5090 ––– VGS = 0V Coss Output Capacitance ––– 3440 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 560 ––– ƒ = 1.0MHz VSD Diode Forward Voltage Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω pF |
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