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TA4401CT Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TA4401CT
Spiegazioni elettronici  1.9 ~ 2.5 GHz Band Power Amplifier
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA4401CT Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TA4401CT
2007-11-01
3
Typical Electrical Characteristics for Reference 2 (18 dBmW for IEEE802.11g)
VCC = 3.3 V, VCON12 = 2.5 V, VCON3 = 1.7 V, f = 2.45 GHz, Ta = 25 °C, Zs = Zl = 50 Ω, unless otherwise noted.
Characteristic
Symbol
Test Condition
Typ
Unit
Operating frequency
f
2.45
GHz
Operating supply voltage
VCC
3.3
V
Shutdown mode leakage
current
ICC_OFF
VCON = 0 V, No RF input (Pin = 0 mW)
20
nA
Supply current
ICC
125
mA
Control current
ICON
3
mA
Power gain
Gp
27.5
dB
Error vector magnitude
EVM
54-Mbps 64QAM OFDM framed signal,
Pout = 18 dBmW (when unframed),
Pin = adjusted
3
%
ACPR1
Δf = 20 MHz
−37
dB
Adjacent channel leakage
power ratio
ACPR2
Δf = 40 MHz
54-Mbps 64QAM OFDM unframed signal,
Pout = 18 dBmW, Pin = adjusted
−55
dB
2fo
−48
dB
Harmonics
3fo
CW signal, Pout = 18 dBmW, Pin = adjusted
−55
dB
Note9: All tests for the above typical electrical characteristics are measured using “Test Board 2”, shown below.


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