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TA4401CT Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TA4401CT Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TA4401CT 2007-11-01 3 Typical Electrical Characteristics for Reference 2 (18 dBmW for IEEE802.11g) VCC = 3.3 V, VCON12 = 2.5 V, VCON3 = 1.7 V, f = 2.45 GHz, Ta = 25 °C, Zs = Zl = 50 Ω, unless otherwise noted. Characteristic Symbol Test Condition Typ Unit Operating frequency f ⎯ 2.45 GHz Operating supply voltage VCC ⎯ 3.3 V Shutdown mode leakage current ICC_OFF VCON = 0 V, No RF input (Pin = 0 mW) 20 nA Supply current ICC 125 mA Control current ICON 3 mA Power gain Gp 27.5 dB Error vector magnitude EVM 54-Mbps 64QAM OFDM framed signal, Pout = 18 dBmW (when unframed), Pin = adjusted 3 % ACPR1 Δf = 20 MHz −37 dB Adjacent channel leakage power ratio ACPR2 Δf = 40 MHz 54-Mbps 64QAM OFDM unframed signal, Pout = 18 dBmW, Pin = adjusted −55 dB 2fo −48 dB Harmonics 3fo CW signal, Pout = 18 dBmW, Pin = adjusted −55 dB Note9: All tests for the above typical electrical characteristics are measured using “Test Board 2”, shown below. |
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