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TA48L03F Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TA48L03F Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 10 page TA48L018,02,025,03,033,05F 2006-11-02 2 Block Diagram Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 16 V Output current IOUT 0.15 A Operating temperature Topr −40~85 °C Junction temperature Tj 150 °C Storage temperature Tstg −55~150 °C Power dissipation PD 0.5 W Thermal resistance (Junction to ambient) Rth(j-a) 250 °C/W Note 1: External current and voltage (including negative voltage) should not be applied to pins not specified. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Protection Function (reference) Characteristics Symbol Test Condition Min Typ. Max Unit Thermal shutdown TSD (Tj) ⎯ ⎯ 160 ⎯ °C Peak circuit current IPEAK VIN = VOUT + 2 V, Tj = 25°C ⎯ 0.27 ⎯ A Short circuit current ISC VIN = VOUT + 2 V, Tj = 25°C ⎯ 0.27 ⎯ A Note 3: The maximum ratings should not be exceeded when the IC is actually used. 1IN 2OUT 3GND Reference voltage Over current protection Thermal shut down protection |
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