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TLP280 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TLP280
Spiegazioni elettronici  GaAs Ired & Photo−Transistor
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP280 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TLP280,TLP280
−4
2007-10-01
3
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
TLP280
TLP280
−4
Unit
Forward current
IF(RMS)
±50
mA
Forward current derating
ΔIF /°C
−0.7 (Ta ≥ 53°C) −0.5 (Ta ≥ 25°C)
mA /°C
Pulse forward current
IFP
±1 (100μs pulse, 100pps)
A
Junction temperature
Tj
125
°C
Collector
−emitter voltage
VCEO
80
V
Emitter
−collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation
(1 circuit)
PC
150
100
mW
Collector power dissipation
derating (Ta ≥ 25°C) (1 circuit)
ΔPC /°C
−1.5
−1.0
mW /°C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−55~100
°C
Lead soldering temperature
Tsol
260 (10s)
°C
Total package power dissipation
(1 circuit)
PT
200
170
mW
Total package power dissipation
derating (Ta ≥ 25°C) (1 circuit)
ΔPT /°C
−2.0
−1.7
mW /°C
Isolation voltage
(Note)
BVS
2500 (AC, 1min., R.H.≤ 60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.


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