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TLP620 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TLP620
Spiegazioni elettronici  Programmable Controllers
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP620 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TLP620,TLP620−2,TLP620−4
2007-10-01
3
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC
5
24
V
Forward current
IF (RMS)
16
20
mA
Collector current
IC
1
10
mA
Operating temperature
Topr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = ±10mA
1.0
1.15
1.3
V
Forward current
IF
VF = ±0.7V
2.5
20
μA
Capacitance
CT
V = 0, f = 1MHz
60
pF
Collector
−emitter
breakdown voltage
V (BR) CEO
IC = 0.5mA
55
V
Emitter
−collector
breakdown voltage
V (BR) ECO
IE = 0.1mA
7
V
VCE = 24V
10
100
nA
Collector dark current
ICEO
VCE = 24V, Ta = 85°C
2
50
μA
Capacitance
(collector to emitter)
CCE
VCE = 0, f = 1MHz
10
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
50
600
Current transfer ratio
IC / IF
IF = ±5mA, VCE = 5V
Rank GB
100
600
%
60
Saturated CTR
IC / IF (sat)
IF = ±1mA, VCE = 0.4V
Rank GB
30
%
IC = 2.4mA, IF = ±8mA
0.4
0.2
Collector
−emitter saturation
voltage
VCE (sat)
IC = 0.2 mA, IF = ±1 mA
Rank GB
0.4
V
Off
−state collector current
IC (off)
VF = ± 0.7V, VCE = 24V
1
10
μA
CTR symmetry
IC (ratio)
IC (IF = −5mA) / IC (IF = +5mA)
0.33
1
3


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