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TLP631 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TLP631 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page TLP631,TLP632 2007-10-01 1 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP631,TLP632 Programmable Controllers AC / DC−Input Module Solid State Relay The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP632 is no−base internal connection for high−EMI environments. • Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577, file no. E67349 Pin Configurations (top view) 1 2 3 4 6 1: Anode 2: Cathode 3: N.C. 4: Emitter 5: Collector 6: Base TLP631 5 1 2 3 4 6 1: Anode 2: Cathode 3: N.C. 4: Emitter 5: Collector 6: N.C TLP632 5 TOSHIBA 11 −7A8 Weight: 0.4 g Unit in mm |
Codice articolo simile - TLP631_07 |
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Descrizione simile - TLP631_07 |
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