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TC74HC365AP Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TC74HC365AP Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TC74HC365,366AP/AF 2007-10-01 2 IEC Logic Symbol TC74HC365A TC74HC366A Truth Table Inputs Outputs 1 G 2 G An Yn (365A) Yn (366A) L L L L H L L H H L H X X Z Z X H X Z Z X: Don’t care Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7 V DC input voltage VIN −0.5 to VCC + 0.5 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK ±20 mA Output diode current IOK ±20 mA DC output current IOUT ±35 mA DC VCC/ground current ICC ±75 mA Power dissipation PD 500 (DIP) (Note 2)/180 (SOP) mW Storage temperature Tstg −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. |
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