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TLP722 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TLP722 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page TLP722 2007-10-01 1 TOSHIBA Photocoupler Photo−Diode TLP722 The TOSHIBA TLP722 consists of a photo−diode optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4). TLP722: Single circuit • Cathode−anode voltage: 30V (max) • Current transfer ratio: 0.1% (min) • Input / output isolation voltage: 4000Vrms (min) • Operating temperature range: −55~100°C • Storage temperature range: −55~125°C • UL recognized: UL1577, E67349 • VDE approved: EN60747-5-2 Maximum operating insulation voltage: 890VPK Maximum permissible over voltage: 8000VPK (Note): When an EN60747-5-2 approved type is needed, please designate the “ Option (D4) ” • SEMKO approved product: SS EN60950, approved No. 9808324 / 01 • Construction mechanical rating Unit in mm TOSHIBA 11−5B2 Weight: 0.28 g Pin Configuration (top view) TLP722 type TLP722F type Creepage distance 7.0 mm 8.0 mm Clearance 7.0 mm 8.0 mm Insulation thickness 0.4 mm 0.4 mm |
Codice articolo simile - TLP722_07 |
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Descrizione simile - TLP722_07 |
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