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2SA1225 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SA1225 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SA1225 2005-02-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −160 V Collector-emitter voltage VCEO −160 V Emitter-base voltage VEBO −5 V Collector current IC −1.5 A Base current IB −0.3 A Ta = 25°C 1.0 Collector power dissipation Tc = 25°C PC 15 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) |
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