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2SA1020 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte 2SA1020
Spiegazioni elettronici  Power Amplifier Applications Power Switching Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1020 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

  2SA1020_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SA1020_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SA1020_07 Datasheet HTML 3Page - Toshiba Semiconductor 2SA1020_07 Datasheet HTML 4Page - Toshiba Semiconductor 2SA1020_07 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1020
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −50 V, IE = 0
−1.0
μA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−50
V
hFE (1)
VCE = −2 V, IC = −0.5 A
70
240
DC current gain
hFE (2)
VCE = −2 V, IC = −1.5 A
40
Collector-emitter saturation voltage
VCE (sat)
IC = −1 A, IB = −0.05 A
−0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = −1 A, IB = −0.05 A
−1.2
V
Transition frequency
fT
VCE = −2 V, IC = −0.5 A
100
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
40
pF
Turn-on time
ton
0.1
Storage time
tstg
1.0
Switching time
Fall time
tf
−IB1 = IB2 = 0.05 A
DUTY CYCLE ≤ 1%
0.1
μs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
20
μs
Input
IB2
IB1
Output
VCC = −30 V
IB2
A1020
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)


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