TLP200D

2007-10-01

2

Characteristics

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating

(Ta

≥ 25°C)

−0.5

mA/°C

Pulse forward current

(100

μs pulse, 100 pps)

1

A

Reverse voltage

5

V

LED

Junction temperature

125

°C

Off-state output terminal voltage

200

V

On-state current

200

mA

On-state RMS current derating

(Ta

≥ 25°C)

−2.0

mA/°C

Detector

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 85

°C

Lead soldering temperature (10 s)

260

°C

Isolation voltage (AC, 1 min., R.H.

≤ 60%)

(Note 1)

1500

Vrms

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted

together.

Note 2: Two channels operating simultaneously.

Recommended Operating Conditions

Characteristics

Symbol

Min

Typ.

Max

Unit

Supply voltage

⎯

150

200

V

Forward current

5

7.5

25

mA

On-state current

⎯

⎯

130

mA

Operating temperature

−20

⎯

65

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.