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TLP741G Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP741G Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP741G 2007-10-01 2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 60 mA Forward current derating (Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C Peak forward current (100μs pulse, 100pps) IFP 1 A Power dissipation PD 100 mW Power dissipation derating (Ta ≥ 25°C) ΔPD / °C −1.0 mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Peak forward voltage(RGK = 27kΩ) VDRM 400 V Peak reverse voltage(RGK = 27kΩ) VRRM 400 V On −state current IT(RMS) 150 mA On −state current derating (Ta ≥ 25°C) ΔIT / °C −2.0 mA / °C Peak on −state current (100μs pulse, 120pps) ITP 3 A Peak one cycle surge current ITSM 2 A Peak reverse gate voltage VGM 5 V Power dissipation PD 150 mW Power dissipation derating (Ta ≥ 25°C) ΔPD / °C −2.0 mW / °C Junction temperature Tj 100 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −3.3 mW / °C Isolation voltage (AC, 1 min., R.H. ≤ 60%) BVS 4000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Operating temperature Topr −25 ― 85 °C Gate to cathode resistance RGK ― 27 33 kΩ Gate to cathode capacity CGK ― 0.01 0.1 μF Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. |
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