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TLP741J Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte TLP741J
Spiegazioni elettronici  GaAs IRed & Photo-Thyristor
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP741J Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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TLP741J
2007-10-01
1
TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor
TLP741J
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP741J consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
• Peak off−state voltage: 600 V (min.)
• Trigger LED current: 10 mA (max.)
• On−state current: 150 mA (max.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 8877
BS EN60950-1: 2002
Certificate no. 8878
Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate no. 40009302
Maximum operating insulation voltage: 630 VPK
Highest permissible over voltage: 6000 VPK
(Note)
When a EN 60747-5-2 approved type is needed,
please designate the “option (D4)”
7.62 mm pich
10.16 mm pich
standard type
(LF2) type
• Creepage distance:
7.0 mm (min.)
8.0 mm (min.)
Clearance:
7.0 mm (min.)
8.0 mm (min.)
Insulation thickness:
0.5 mm (min.)
0.5 mm (min.)
Pin Configuration (top view)
1 : ANODE
2 : CATHODE
3 : N.C.
4 : CATHODE
5 : ANODE
6 : GATE
5
6
4
2
1
3
Unit in mm
TOSHIBA
11−7B1
Weight: 0.35 g


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