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TLP747GF Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte TLP747GF
Spiegazioni elettronici  GaAs Ired & Photo−Thyristor
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP747GF Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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TLP747GF
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo
−Thyristor
TLP747GF
Office Machine
Switching Power Supply
The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G.
(both condition and limits)
• Peak off−state voltage: 400V min.
• Trigger LED current: 15mA max.
• On−state current: 150mA max.
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 7364
BS EN60950-1: 2002
Certificate no. 7365
• SEMCO approved:EN60065,EN60950-1,EN60335-1
Certificate no.302586
• Isolation voltage: 4000Vrms min.
• Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate no.40009373
Maximum operating insulation voltage: 890, 1130VPK
Highest permissible over voltage: 6000, 8000VPK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “ Option (D4) ”
• Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
• Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configuration (top view)
1 : ANODE
2 : CATHODE
3 : NC
4 : CATHODE
5 : ANODE
6 : GATE
5
6
4
2
1
3
Unit in mm
TOSHIBA
11−7A802
Weight: 0.42 g


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