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TLP751 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TLP751
Spiegazioni elettronici  GaA?밃s Ired Photo IC
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP751 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TLP751
2007-10-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
IF
25
mA
Pulse forward current
(Note 2)
IFP
50
mA
Peak transient forward
current
(Note 3)
IFPT
1
A
Reverse voltage
VR
5
V
Diode power dissipation
(Note 4)
PD
45
mW
Output current
IO
8
mA
Peak output current
IOP
16
mA
Output voltage
VO
−0.5~15
V
Supply voltage
VCC
−0.5~15
V
Base current
IB
5
mA
Output power dissipation
(Note 5)
PO
100
mW
Emitter
−base reverse voltage
VEB
5
V
Operating temperature range
Topr
−55~100
°C
Storage temperature range
Tstg
−55~125
°C
Lead solder temperature(10s)
(Note 6)
Tsol
260
°C
Isolation voltage
(AC,1min.,R.H.≤ 60%)
(Note 7)
BVS
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70°C
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.6mA / °C above 70°C
(Note 3) Pulse width ≤ 1μs,300pps.
(Note 4) Derate 0.9mW / °C above 70°C
(Note 5) Derate 2mW / °C above 70°C
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted
together.


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