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TLP830 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TLP830
Spiegazioni elettronici  Infrared LED Phototransistor
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP830 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TLP830(F)
2007-10-01
3
Precaution
1. If the chemical are used for cleaning, the soldered surface only shall be cleaned with chemicals avoiding the
whole cleaning of the package.
2. The container is made of polybutylene terephthalate. Oil or chemicals may cause melting or cracks. Check the
environment carefully before installing.
3. Shall be mounted on an unwarped surface.
4. A visible light cut
−off type photo transistor which blocks light with frequencies of 700nm or above is used.
However, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. Install
avoiding the disturbance light.
5. Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a
circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion
efficiency to fluctuation in infrared LED optical output is 1: 1.
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