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TLP830 Scheda tecnica(PDF) 7 Page - Toshiba Semiconductor |
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TLP830 Scheda tecnica(HTML) 7 Page - Toshiba Semiconductor |
7 / 9 page TLP830(F) 2007-10-01 7 VCE(sat) – Ta (TYP.) Ambient temperature Ta (°C) 0.20 0 −40 0.16 0.12 0.08 0.04 −20 0 20 40 60 80 100 IC = 0.5 mA IF = 20 mA Switching characteristics (non saturated operation) (typ.) Load resistance RL (kΩ) 500 0.3 0.1 300 100 50 30 10 5 3 1 0.5 0.3 0.5 1 3 5 10 30 50 ts td tr・tf Ta = 25 °C VCC = 5 V VOUT = 1 V Switching characteristics (saturated operation) (typ.) Load resistance RL (kΩ) 3000 3 1 1000 500 300 100 50 30 10 5 3 5 10 30 50 100 300 500 td tr ts tf Ta = 25 °C IF = 20 mA VCC = 5 V VOUT ≧ 4.65V RL VOUT 90% tf tr IF 10% td ts IF VOUT VCC Switching time test circuit |
Codice articolo simile - TLP830_07 |
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Descrizione simile - TLP830_07 |
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