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TLP831 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TLP831 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TLP831(F) 2007-10-01 3 Opto Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA 1.00 1.15 1.30 V Reverse current IR VR = 5V ― ― 10 μA Peak emission wavelength λP IF = 10mA ― 940 ― nm Dark current ID (ICEO) VCE = 24V, IF = 0 ― ― 0.1 μA Peak sensitivity wavelength λP ― 870 ― nm Current transfer ratio IC / IF VCE = 2V, IF = 10mA 5 ― 100 % Collector −emitter saturation voltage VCE (sat) IF = 20mA, IC = 0.5mA ― 0.1 0.35 V Rise time tr ― 15 50 Fall time tf VCC = 5V, IC = 1mA RL = 1kΩ (Note 2) ― 15 50 μs Note 2: Switching time measurement circuit and waveform Precautions • When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the whole package for cleaning. Chemicals remaining on a surface of LED or phototransistor, if any, would have a bad influence to the optical characteristics and it may severely lower the conversion efficiency. • The environment to install the device should be determined carefully. Oil or chemicals may cause the package to be dissolved or cracked. • The device should be mounted on an unwrapped surface. • Install this device as avoiding the disturbance light as possible. A visible light cut−off type phototransistor which blocks light with frequencies of 700nm or above is used. However, the device cannot block infrared light with a wavelength of 700nm or more, and it may do mistaken movements. • Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. VOUT VCC IF RL 10% 90% IF VOUT tf tr ts td (0) O P (t) O P (0) F I / C I (t) F I / C I = |
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