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TLP832F Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TLP832F
Spiegazioni elettronici  Electronic Equipment Such As VCRS And CD Players
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP832(F)
2007-10-01
3
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 10mA
1.00
1.15
1.30
V
Reverse current
IR
VR = 5V
10
μA
Peak emission wavelength
λP
IF = 10mA
940
nm
Dark current
ID (ICEO)
VCE = 24V, IF = 0
0.1
μA
Peak sensitivity wavelength
λP
870
nm
Current transfer ratio
IC / IF
VCE = 2V, IF = 10mA
5
100
%
Collector
−emitter
saturation voltage
VCE (sat)
IF = 20mA, IC = 0.5mA
0.1
0.35
V
Rise time
tr
15
50
Fall time
tf
VCC = 5V, IC = 1mA,
RL = 1kΩ
(Note 2)
15
50
μs
(Note 2): Switching time measurement circuit and waveform
Precautions
1. When removing flux with chemicals after soldering, clean only the soldered part of the leads. Do not immerse
the entire package in the cleaning solvent. Chemical residue on the LED emitter or the phototransistor may
adversely affect the optical characteristics of the device and may drastically reduce the conversion efficiency.
2. Care must taken in relation to the environment in which the device is to be installed.
Oil or chemicals may cause the package to melt or crack.
3. Mount the device on a level surface.
4. Keep the device away from external light. Although the phototransistor is of low optical sensitivity, the device
may malfunction if external light with a wavelength of 700 nm or more is allowed to impinge on it.
5. Conversion efficiency falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in conversion efficiency over time.
The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1.
IF
VCC
VOUT
RL
IF
VOUT
td
tr
ts
tf
10%
90%
(0)
O
P
(t)
O
P
(0)
F
I
/
C
I
(t)
F
I
/
C
I
=


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