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TC74AC86F Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TC74AC86F
Spiegazioni elettronici  CMOS Digital Integrated Circuit Silicon Monolithic Quad Exclusive OR Gate
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC74AC86F Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TC74AC86P/F/FN/FT
2007-10-01
2
Pin Assignment
IEC Logic Symbol
Truth Table
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to VCC + 0.5
V
DC output voltage
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
±20
mA
Output diode current
IOK
±50
mA
DC output current
IOUT
±50
mA
DC VCC/ground current
ICC
±100
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP/TSSOP)
mW
Storage temperature
Tstg
−65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
(4)
(9)
(5)
2A
=1
3A
2B
(12)
(10)
(13)
4A
3B
(6)
(8)
(11)
2Y
3Y
4Y
4B
(1)
(2)
1A
1B
(3)
1Y
VCC
9
4B
4A
4Y
8
14
13
12
11
10
1A
1
2
3
4
5
6
7
2A
2B
2Y
GND
3B
3A
3Y
(top view)
1B
1Y


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