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TC59LM906AMG-37 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC59LM906AMG-37 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 59 page TC59LM914/06AMG-37,-50 2004-08-20 4/59 Rev 1.0 BLOCK DIAGRAM Note: The TC59LM906AMG configuration is 8 Banks of 16384 × 512 × 8 of cell array with the DQ pins numbered DQ0~DQ7. The TC59LM914AMG configuration is 8 Banks of 16384 × 256 × 16 of cell array with the DQ pins numbered DQ0~DQ15. TC59LM906AMG has DQS, DQS pin for Differential Data Strobe. TC59LM914AMG has UDQS and LDQS. DQ0~DQn DLL CLOCK BUFFER CLK CLK PD To each block COMMAND DECODER CS FN ADDRESS BUFFER CONTROL SIGNAL GENERATOR MODE REGISTER REFRESH COUNTER A0~A13 BA0~BA2 BURST COUNTER WRITE ADDRESS LATCH/ ADDRESS COMPARATOR UPPER ADDRESS LATCH READ DATA BUFFER DQ BUFFER DQS LOWER ADDRESS LATCH DQS WRITE DATA BUFFER BANK #7 BANK #6 BANK #5 BANK #4 BANK #3 BANK #2 BANK #1 BANK #0 MEMORY CELL ARRAY COLUMN DECODER |
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