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TPC6603 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte TPC6603
Spiegazioni elettronici  Transistor Silicon PNP Epitaxial Type
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6603 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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TPC6603
2006-11-13
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6603
Switching Applications
DC/DC Converter Applications
Strobe Flash Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 40 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−20
V
Emitter-base voltage
VEBO
−7
V
DC
IC
−3.0
Collector current
Pulse
ICP
−5.0
A
Base current
IB
−0.3
mA
DC
0.8
Collector power
dissipation
t = 10 s
PC (Note 1)
1.6
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm
2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.01 g (typ.)
1. Collector
2. Collector
3. Base
4. Emitter
5. Collector
6. Collector


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