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TPC6603 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TPC6603 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TPC6603 2006-11-13 1 TOSHIBA Transistor Silicon PNP Epitaxial Type TPC6603 Switching Applications DC/DC Converter Applications Strobe Flash Applications • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −7 V DC IC −3.0 Collector current Pulse ICP −5.0 A Base current IB −0.3 mA DC 0.8 Collector power dissipation t = 10 s PC (Note 1) 1.6 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm 2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.01 g (typ.) 1. Collector 2. Collector 3. Base 4. Emitter 5. Collector 6. Collector |
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