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TC7SG02FU Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor

Il numero della parte TC7SG02FU
Spiegazioni elettronici  2 Input NOR Gate
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SG02FU Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor

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TC7SG02FU
2007-11-01
4
AC Electrical Characteristics (input tr = tf = 3 ns)
Ta
= 25°C
Ta
= −40~85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
0.9
17.0
1.1~1.3
8.8
18.4
1.0
34.2
1.4~1.6
5.0
8.5
1.0
10.0
1.65~
1.95
3.8
6.2
1.0
6.7
2.3~2.7
2.7
3.9
1.0
4.4
CL = 10 pF,
RL = 1 MΩ
3.0~3.6
2.1
3.1
1.0
3.7
0.9
20.7
1.1~1.3
10.6
21.5
1.0
37.2
1.4~1.6
5.9
9.3
1.0
11.2
1.65~
1.95
4.5
6.9
1.0
7.1
2.3~2.7
3.0
4.4
1.0
5.0
CL = 15 pF,
RL = 1 MΩ
3.0~3.6
2.4
3.4
1.0
3.9
0.9
29.6
1.1~1.3
14.8
29.6
1.0
56.0
1.4~1.6
8.0
13.1
1.0
15.9
1.65~
1.95
6.0
9.2
1.0
9.6
2.3~2.7
3.9
5.7
1.0
6.1
Propagation delay time
tPLH
tPHL
CL = 30 pF,
RL = 1 MΩ
3.0~3.6
3.0
4.4
1.0
4.8
ns
Input capacitance
CIN
3.6
3
pF
Power dissipation capacitance
CPD
(Note 13)
0.9~3.6
6
pF
Note 13: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr) = CPD・VCC・fIN + ICC


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