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LS430850 Scheda tecnica(PDF) 3 Page - Powerex Power Semiconductors

Il numero della parte LS430850
Spiegazioni elettronici  POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)
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Produttore elettronici  POWEREX [Powerex Power Semiconductors]
Homepage  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

LS430850 Scheda tecnica(HTML) 3 Page - Powerex Power Semiconductors

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Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
POW-R-BLOK
TM
Single SCR Isolated Module
500 Amperes / Up to 1600 Volts
Revision Date: 4/19/2002
LS43__50
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Max.
Units
Repetitive Peak Forward Leakage Current
IDRM
Up to 1600V, TJ=130°C
80
mA
Repetitive Peak Reverse Leakage Current
IRRM
Up to 1600V, TJ=130°C
80
mA
Peak On-State Voltage
VFM
ITM=1500A
1.30
V
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 130°C, I = 15%IT(AV) to πIT(AV)
0.81
0.32
V
mΩ
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 130°C, I = πIT(AV) to ITSM
0.90
0.26
V
mΩ
VTM Coefficients, Full Range
TJ = 130°C, I = 10A to 6kA
VTM = A+ B Ln I +C I + D Sqrt I
A =
B =
C =
D =
0.8824
-4.46E-02
8.12E-05
1.54E-02
Minimum dV/dt
dV/dt
Exponential to VDRM
Tj=130°C, Gate Open
1000 Typ.
V/µs
Gate Trigger Current
IGT
Tj=25°C, VD=12V
200
mA
Gate Trigger Voltage
VGT
Tj=25°C, VD=12V
3.0
Volts
Non-Triggering Gate Voltage
VGDM
Tj=130°C, VD= ½ VDRM
0.25
Volts
Peak Forward Gate Current
IGTM
4.0
Amp
Peak Reverse Gate Voltage
VGRM
5
Volts
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
RΘJ-C
Per Module/Junction
0.0650
°C/W
Thermal Impedance Coefficients
ZΘJ-C
ZΘJ-C= K1 (1-exp(-t/τ 1))
+ K2 (1-exp(-t/τ 2))
+ K3 (1-exp(-t/τ 3))
+ K4 (1-exp(-t/τ 4))
K1 = 8.03E-04
K2 = 1.03E-02
K3 = 1.64E-02
K4 = 3.75E-02
τ 1 = 3.39E-04
τ 2 = 3.15E-03
τ 3 = 0.106
τ 4 = 2.066
Thermal Resistance, Case to Sink Lubricated
RΘC-S
Per Module
0.02
°C/W


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