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2SK3440 Scheda tecnica(PDF) 5 Page - Toshiba Semiconductor |
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2SK3440 Scheda tecnica(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SK3440 2006-11-17 5 Drain-source voltage VDS (V) Safe operating area Channel temperature (initial) Tch (°C) EAS – Tch rth – tw Pulse width tw (s) 1000 800 600 400 200 0 25 50 75 100 125 150 ID max (pulsed) * ID max (continuous) 100 μs * 1 ms * *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature DC operation 1 1 3 5 10 30 50 100 300 500 3 10 100 30 Waveform IAR BVDSS VDD VDS RG = 25 Ω VDD = 50 V, L = 350 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit 0 V 15 V 0.01 0.1 1 10 10 μ 100 μ 1 m 10 m 100 m 1 10 T PDM t Duty = t/T Rth (ch-c) = 1.0°C/W Duty = 0.5 0.2 0.1 Single pulse 0.05 0.02 0.01 |
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