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2SK3130 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SK3130 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3130 2006-11-08 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Gate-source breakdown voltage V (BR) GSS IG = ±100 μA, VDS = 0 V ±30 ⎯ ⎯ V Drain cut-OFF current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 1.12 1.55 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 1.5 5.0 ⎯ S Input capacitance Ciss ⎯ 1300 ⎯ Reverse transfer capacitance Crss ⎯ 130 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 400 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-ON time ton ⎯ 45 ⎯ Fall time tf ⎯ 40 ⎯ Switching time Turn-OFF time toff ⎯ 150 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 30 ⎯ Gate-source charge Qgs ⎯ 18 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− 400 V, VGS = 10 V, ID = 6 A ⎯ 12 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 85 ⎯ ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 0.21 ⎯ μC Marking Duty <= 1%, tw = 10 μs 0 V 10 V VGS RL = 100 Ω VDD ∼− 300 V ID = 3 A VOUT Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. K3130 Part No. (or abbreviation code) |
Codice articolo simile - 2SK3130_06 |
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