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2SK3130 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte 2SK3130
Spiegazioni elettronici  Silicon N Channel MOS Type
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3130 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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2SK3130
2006-11-08
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±100 μA, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
1.12
1.55
Ω
Forward transfer admittance
⎪Yfs
VDS = 10 V, ID = 3 A
1.5
5.0
S
Input capacitance
Ciss
1300
Reverse transfer capacitance
Crss
130
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
400
pF
Rise time
tr
25
Turn-ON time
ton
45
Fall time
tf
40
Switching time
Turn-OFF time
toff
150
ns
Total gate charge
(gate-source plus gate-drain)
Qg
30
Gate-source charge
Qgs
18
Gate-drain (“miller”) charge
Qgd
VDD ∼− 400 V, VGS = 10 V, ID = 6 A
12
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
6
A
Pulse drain reverse current
(Note 1)
IDRP
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
−1.7
V
Reverse recovery time
trr
85
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/μs
0.21
μC
Marking
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 100 Ω
VDD ∼− 300 V
ID = 3 A
VOUT
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3130
Part No. (or abbreviation code)


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