2SK3079A

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3079A

470 MHz Band Amplifier Applications

(Note)The TOSHIBA products listed in this document are intended for

high frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment

• Drain Efficiency: ηD = 50.0% (min)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

10

V

Gate-source voltage

3

V

Drain current

3

A

Power dissipation

20.0

W

Channel temperature

150

°C

Storage temperature range

−45~150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)

Marking

Caution: This device is sensitive to electrostatic discharge.

Please make enough tool and equipment earthed when you handle.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-5N1A

Weight: 0.08 g (typ.)

UD

F

**

Type Name

Dot

Lot No.