2SK3077

2007-2-19

1

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK3077

900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

(Note)The TOSHIBA products listed in this document are intended for

high frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

Output Power

Gain

Drain Efficiency

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

10

V

Gate-Source Voltage

5

V

Drain Current

0.1

A

Power Dissipation

250

mW

Channel Temperature

150

°C

Storage Temperature Range

−45~150

°C

*:

Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB

MARKING

Unit: mm

JEDEC

—

JEITA

—

TOSHIBA

2−2K1D