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2SK2963 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SK2963 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK2963 2007-03-16 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications • 4 V gate drive • Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.2 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) • Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 1 Drain current Pulse (Note 1) IDP 3 A Drain power dissipation PD 0.5 W Drain power dissipation (Note 2) PD 1.5 W Single pulse avalanche energy (Note 3) EAS 137 mJ Avalanche current IAR 1 A Repetitive avalanche energy (Note 4) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Please use devices on condition that the channel temperature is below 150 °C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A Note 4: Repetitive rating: pulse width limited by maximum junction temperature. Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch-a) 250 °C/W Unit: mm JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5K1B Weight: 0.05 g (typ.) |
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