2SK2963

2007-03-16

1

π-MOS V)

2SK2963

DC-DC Converter, Relay Drive and Motor Drive

Applications

• 4 V gate drive

Characteristics

Symbol

Rating

Unit

Drain-source voltage

100

V

100

V

Gate-source voltage

±20

V

DC (Note 1)

1

Drain current

Pulse (Note 1)

3

A

Drain power dissipation

0.5

W

Drain power dissipation

(Note 2)

1.5

W

Single pulse avalanche energy

(Note 3)

137

mJ

Avalanche current

1

A

Repetitive avalanche energy (Note 4)

0.05

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the channel temperature is below 150

°C.

Note 2: Mounted on ceramic substrate (25.4 mm

× 25.4 mm × 0.8 mm)

Note 4: Repetitive rating: pulse width limited by maximum junction temperature.

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device.

Please handle with caution.

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

250

°C/W

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-5K1B

Weight: 0.05 g (typ.)