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2SK982 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SK982
Spiegazioni elettronici  Silicon N Channel MOS Type High Speed Switching Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK982 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SK982
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK982
High Speed Switching Applications
Analog Switch Applications
Interface Applications
• Excellent switching times: ton = 14 ns (typ.)
• High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = 50 mA
• Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA
• Enhancement-mode
• Complementary to 2SJ148
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
200
Drain current
Pulse
IDP
800
mA
Drain power dissipation
(Ta
= 25°C)
PD
400
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1H
Weight: 0.21 g (typ.)


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