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2SJ344 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SJ344
Spiegazioni elettronici  High Speed Switching Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ344 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SJ344
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ344
High Speed Switching Applications
Analog Switch Applications
• Low threshold voltage: Vth = −0.8~−2.5 V
• High speed
• Enhancement-mode
• Small package
• Complementary to 2SK1827
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
−50
V
Gate-source voltage
VGSS
−7
V
DC drain current
ID
−50
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = −7 V, VDS = 0
−1
μA
Drain-source breakdown voltage
V (BR) DSS
ID = −100 μA, VGS = 0
−50
V
Drain cut-off current
IDSS
VDS = −50 V, VGS = 0
−1
μA
Gate threshould voltage
Vth
VDS = −5 V, ID = −0.1 mA
−0.8
−2.5
V
Forward transfer admittance
⎪Yfs
VDS = −5 V, ID = −10 mA
15
mS
Drain-source ON resistance
RDS (ON)
ID = −10 mA, VGS = −4 V
20
50
Ω
Input capacitance
Ciss
VDS = −5 V, VGS = 0, f = 1 MHz
10.5
pF
Reverse transfer capacitance
Crss
VDS = −5 V, VGS = 0, f = 1 MHz
1.9
pF
Output capacitance
Coss
VDS = −5 V, VGS = 0, f = 1 MHz
7.2
pF
Turn-on time
ton
0.15
Switching time
Turn-off time
toff
VDD = −5 V, ID = −10 mA,
VGS = 0~−4 V
0.13
μs
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)


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