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2SC2703 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte 2SC2703
Spiegazioni elettronici  Silicon NPN Epitaxial Type (PCT Process)
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2703 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

  2SC2703_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC2703_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC2703_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC2703_06 Datasheet HTML 4Page - Toshiba Semiconductor  
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2SC2703
2006-11-09
3
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
IC – VBE
Safe Operating Area
PC – Ta
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
hFE – IC
Collector current IC (mA)
VCE (sat) – IC
20
0
40
60
100
120
1000
0
200
600
800
80
140
160
400
1000
10
1
500
300
100
30
10
30
100
300
1000
Ta = 100°C
25
−25
Common emitter
VCE = 2 V
3
50
10
1000
1
0
500
5
3
0.4
0.8
1.2
1.6
2.0
Ta = 100°C
25
−25
Common emitter
VCE = 2 V
100
50
30
300
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
20
0.3
50
100
300
500
1000
10
30
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
(Ta = 25°C)
3
VCEO
max
3000
1
300
Common emitter
IC/IB = 10
1
0.01
1
0.3
0.1
0.05
0.03
3
10
1000
Ta = 100°C
−25
25
100
0.5
30
7
6
1200
0
0
800
600
400
200
1
2
3
4
5
6
Common emitter
Ta = 25°C
4
8
0
IB = 1 mA
9
1000
5
2
3
Base-emitter voltage VBE (V)


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