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STB20NM60D Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STB20NM60D Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB20NM60D Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VDGR Drain-gate voltage (RGS = 20 kΩ) 600 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 20 A ID Drain current (continuous) at TC = 100°C 12.6 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25°C 192 W Derating factor 1.20 W/°C dv/dt (2) 2. ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS Peak diode recovery voltage slope 20 V/ns Tj Tstg Operating junction temperature Storage temperature – 65 to 150 °C °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case Max 0.65 °C/W Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 700 mJ |
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